DOPING EFFECT OF LA AND V IN SrBi4Ti4O15 THIN FILMS

SrBi 4 Ti 4 O 15 (SBTi), SrBi 4−x La x Ti 4 O 15 (x = 0.10, 0.25: SBLT), and SrBi 4−y/3 Ti 4−y V y O 15 (y = 0.03: SBTV) thin films have been prepared by the sol-gel method. The ferroelectric properties of the SBTi thin films have been improved by La and V substitution. The SBLT-0.10 and SBTV-0.03 f...

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Bibliographic Details
Published in:Integrated ferroelectrics 2006-01, Vol.84 (1), p.83-89
Main Authors: SUN, HUI, QIAN, YA-FENG, FANG, HONG, ZHU, JUN, CHEN, XIAO-BING
Format: Article
Language:English
Subjects:
ferroelectric properties
Ferroelectric thin films
La, V substitution
sol-gel method
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Summary:SrBi 4 Ti 4 O 15 (SBTi), SrBi 4−x La x Ti 4 O 15 (x = 0.10, 0.25: SBLT), and SrBi 4−y/3 Ti 4−y V y O 15 (y = 0.03: SBTV) thin films have been prepared by the sol-gel method. The ferroelectric properties of the SBTi thin films have been improved by La and V substitution. The SBLT-0.10 and SBTV-0.03 films exhibit large remnant polarization (2P r ) of 45.9 μC/cm 2 and 34.0 μC/cm 2 respectively. V doping brings about the more significant improvement of the fatigue resistance of the SBTi. After being subject to 2.2 × 10 9 switching cycles at the low frequency of 50 kHz, the P nv of SBTV-0.03 change little.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580601085289