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DOPING EFFECT OF LA AND V IN SrBi4Ti4O15 THIN FILMS
SrBi 4 Ti 4 O 15 (SBTi), SrBi 4−x La x Ti 4 O 15 (x = 0.10, 0.25: SBLT), and SrBi 4−y/3 Ti 4−y V y O 15 (y = 0.03: SBTV) thin films have been prepared by the sol-gel method. The ferroelectric properties of the SBTi thin films have been improved by La and V substitution. The SBLT-0.10 and SBTV-0.03 f...
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| Published in: | Integrated ferroelectrics 2006-01, Vol.84 (1), p.83-89 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| container_end_page | 89 |
| container_issue | 1 |
| container_start_page | 83 |
| container_title | Integrated ferroelectrics |
| container_volume | 84 |
| creator | SUN, HUI QIAN, YA-FENG FANG, HONG ZHU, JUN CHEN, XIAO-BING |
| description | SrBi
4
Ti
4
O
15
(SBTi), SrBi
4−x
La
x
Ti
4
O
15
(x = 0.10, 0.25: SBLT), and SrBi
4−y/3
Ti
4−y
V
y
O
15
(y = 0.03: SBTV) thin films have been prepared by the sol-gel method. The ferroelectric properties of the SBTi thin films have been improved by La and V substitution. The SBLT-0.10 and SBTV-0.03 films exhibit large remnant polarization (2P
r
) of 45.9 μC/cm
2
and 34.0 μC/cm
2
respectively. V doping brings about the more significant improvement of the fatigue resistance of the SBTi. After being subject to 2.2 × 10
9
switching cycles at the low frequency of 50 kHz, the P
nv
of SBTV-0.03 change little. |
| doi_str_mv | 10.1080/10584580601085289 |
| format | article |
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4
Ti
4
O
15
(SBTi), SrBi
4−x
La
x
Ti
4
O
15
(x = 0.10, 0.25: SBLT), and SrBi
4−y/3
Ti
4−y
V
y
O
15
(y = 0.03: SBTV) thin films have been prepared by the sol-gel method. The ferroelectric properties of the SBTi thin films have been improved by La and V substitution. The SBLT-0.10 and SBTV-0.03 films exhibit large remnant polarization (2P
r
) of 45.9 μC/cm
2
and 34.0 μC/cm
2
respectively. V doping brings about the more significant improvement of the fatigue resistance of the SBTi. After being subject to 2.2 × 10
9
switching cycles at the low frequency of 50 kHz, the P
nv
of SBTV-0.03 change little.</description><identifier>ISSN: 1058-4587</identifier><identifier>EISSN: 1607-8489</identifier><identifier>DOI: 10.1080/10584580601085289</identifier><language>eng</language><publisher>Taylor & Francis Group</publisher><subject>ferroelectric properties ; Ferroelectric thin films ; La, V substitution ; sol-gel method</subject><ispartof>Integrated ferroelectrics, 2006-01, Vol.84 (1), p.83-89</ispartof><rights>Copyright Taylor & Francis Group, LLC 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>SUN, HUI</creatorcontrib><creatorcontrib>QIAN, YA-FENG</creatorcontrib><creatorcontrib>FANG, HONG</creatorcontrib><creatorcontrib>ZHU, JUN</creatorcontrib><creatorcontrib>CHEN, XIAO-BING</creatorcontrib><title>DOPING EFFECT OF LA AND V IN SrBi4Ti4O15 THIN FILMS</title><title>Integrated ferroelectrics</title><description>SrBi
4
Ti
4
O
15
(SBTi), SrBi
4−x
La
x
Ti
4
O
15
(x = 0.10, 0.25: SBLT), and SrBi
4−y/3
Ti
4−y
V
y
O
15
(y = 0.03: SBTV) thin films have been prepared by the sol-gel method. The ferroelectric properties of the SBTi thin films have been improved by La and V substitution. The SBLT-0.10 and SBTV-0.03 films exhibit large remnant polarization (2P
r
) of 45.9 μC/cm
2
and 34.0 μC/cm
2
respectively. V doping brings about the more significant improvement of the fatigue resistance of the SBTi. After being subject to 2.2 × 10
9
switching cycles at the low frequency of 50 kHz, the P
nv
of SBTV-0.03 change little.</description><subject>ferroelectric properties</subject><subject>Ferroelectric thin films</subject><subject>La, V substitution</subject><subject>sol-gel method</subject><issn>1058-4587</issn><issn>1607-8489</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkDFPwzAQhS0EEqXwA9g8sQXu7Di2JZZSmjZSaJAaWKPEiaWgtIE4FfDvMSpbB6a7e_e9NzxCrhFuERTcIQgVCgUR-FMwpU_IBCOQgQqVPvW7_wcekOfkwrk3AORCRhPCH7PnZL2kizhezHOaxTSd0dn6kb7SZE03w0Mb5m2YoaD5ygtxkj5tLsmZLTvXXP3NKXmJF_l8FaTZMpnP0qBlSo6BsshYDSFUjQatUVmmsSqhkbWw2oRoK2aEjjhG1lSCS69Lo2tljVEokU_JzSH3feg_9o0bi23rTNN15a7p965gWoRKgfSgPIDtzvbDtvzsh64uxvK76wc7lDvTuuKooGL8Gr3z_l8nRyh-Oz6O4D9KRmfI</recordid><startdate>20060101</startdate><enddate>20060101</enddate><creator>SUN, HUI</creator><creator>QIAN, YA-FENG</creator><creator>FANG, HONG</creator><creator>ZHU, JUN</creator><creator>CHEN, XIAO-BING</creator><general>Taylor & Francis Group</general><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20060101</creationdate><title>DOPING EFFECT OF LA AND V IN SrBi4Ti4O15 THIN FILMS</title><author>SUN, HUI ; QIAN, YA-FENG ; FANG, HONG ; ZHU, JUN ; CHEN, XIAO-BING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i287t-8f122d040be909918f291ba0e7d5f9c41fb2c596316fcb5377d57c9d8fcc81713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>ferroelectric properties</topic><topic>Ferroelectric thin films</topic><topic>La, V substitution</topic><topic>sol-gel method</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SUN, HUI</creatorcontrib><creatorcontrib>QIAN, YA-FENG</creatorcontrib><creatorcontrib>FANG, HONG</creatorcontrib><creatorcontrib>ZHU, JUN</creatorcontrib><creatorcontrib>CHEN, XIAO-BING</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Integrated ferroelectrics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SUN, HUI</au><au>QIAN, YA-FENG</au><au>FANG, HONG</au><au>ZHU, JUN</au><au>CHEN, XIAO-BING</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>DOPING EFFECT OF LA AND V IN SrBi4Ti4O15 THIN FILMS</atitle><jtitle>Integrated ferroelectrics</jtitle><date>2006-01-01</date><risdate>2006</risdate><volume>84</volume><issue>1</issue><spage>83</spage><epage>89</epage><pages>83-89</pages><issn>1058-4587</issn><eissn>1607-8489</eissn><abstract>SrBi
4
Ti
4
O
15
(SBTi), SrBi
4−x
La
x
Ti
4
O
15
(x = 0.10, 0.25: SBLT), and SrBi
4−y/3
Ti
4−y
V
y
O
15
(y = 0.03: SBTV) thin films have been prepared by the sol-gel method. The ferroelectric properties of the SBTi thin films have been improved by La and V substitution. The SBLT-0.10 and SBTV-0.03 films exhibit large remnant polarization (2P
r
) of 45.9 μC/cm
2
and 34.0 μC/cm
2
respectively. V doping brings about the more significant improvement of the fatigue resistance of the SBTi. After being subject to 2.2 × 10
9
switching cycles at the low frequency of 50 kHz, the P
nv
of SBTV-0.03 change little.</abstract><pub>Taylor & Francis Group</pub><doi>10.1080/10584580601085289</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1058-4587 |
| ispartof | Integrated ferroelectrics, 2006-01, Vol.84 (1), p.83-89 |
| issn | 1058-4587 1607-8489 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29548807 |
| source | Taylor and Francis Science and Technology Collection |
| subjects | ferroelectric properties Ferroelectric thin films La, V substitution sol-gel method |
| title | DOPING EFFECT OF LA AND V IN SrBi4Ti4O15 THIN FILMS |
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