Silicon epilayers grown by chemical vapor deposition from high-purity silane

Structurally perfect, high-purity silicon epilayers up to 20 mum in thickness, with a carrier concentration n = 10 cm are grown through thermal decomposition of silane. Experimental evidence is presented that the concentration of 'electrically active' impurities in high-purity silane can b...

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Bibliographic Details
Published in:Inorganic materials 2006-08, Vol.42 (8), p.815-818
Main Authors: Gusev, A. V., Udalov, O. F., Krasil’nikov, V. S., Maksimov, G. A., Kornaukhov, A. V., Kuznetsov, O. A., Uskova, E. A., Shmagin, V. B.
Format: Article
Language:English
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Summary:Structurally perfect, high-purity silicon epilayers up to 20 mum in thickness, with a carrier concentration n = 10 cm are grown through thermal decomposition of silane. Experimental evidence is presented that the concentration of 'electrically active' impurities in high-purity silane can be evaluated from the electrical parameters of Si epilayers grown from it.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168506080012