Study on Czochralski growth and defects of LiAlO2 single crystals

The LiAlO2 single crystal was grown by the conventional Czochralski method under ambient pressure with pull rate at 3.0mm/min and rotation rate at 25rpm by a home-made furnace. In order to examine the defects of the LiAlO2 crystal, the surfaces were polished, and etched; these surfaces included the...

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Bibliographic Details
Published in:Journal of crystal growth 2006-07, Vol.292 (2), p.542-545
Main Authors: Chou, Mitch M C, Tsao, Pai Chun, Huang, Hul Chun
Format: Article
Language:English
Online Access:Get full text
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Summary:The LiAlO2 single crystal was grown by the conventional Czochralski method under ambient pressure with pull rate at 3.0mm/min and rotation rate at 25rpm by a home-made furnace. In order to examine the defects of the LiAlO2 crystal, the surfaces were polished, and etched; these surfaces included the (100), , (010), and (001) faces. Analysis with an optical microscope showed two domains on the and the (010) surfaces. Moreover, some inclusions were observed on the (010) face where the etch pit density was 1.3-1.6X104cm-2. The experimental results showed that there are different etching characteristics and patterns on these four surfaces of the specimen.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2006.04.061