Goos–Hänchen shift for coupled vibrational modes in a semiconductor structure

• Published in: Journal of physics. Condensed matter 2024-08, Vol.36 (32), p.325301
• Main Authors: Villegas, Diosdado, Lazcano, Zorayda, Arriaga, Jesús, Pérez-Álvarez, R, de León-Pérez, Fernando
• Format: Article
• Language: English
• Subjects: coupled modes; Goos–Hänchen shift; semiconductor structures; vibrational waves
• ISSN: 0953-8984; 1361-648X
• DOI: 10.1088/1361-648X/ad3370

We present a theoretical investigation of the Goos-Hänchen shift (GHS) experienced by acoustic and optical vibrational modes reflected and transmitted from the surfaces of a semiconductor thin film sandwiched between two semi-infinite media. Our study focuses on the impact of the incident angle on the GHS, considering the coupling between longitudinal and transverse modes. For acoustic vibrations, our findings reveal that the GHS can reach magnitudes up to 7 times larger than the thickness of the thin film and up to 20 times larger than the incident wavelength. Besides, it is shown that this significant amplification of the GHS highlights the strong influence of the incident angle and the frequency of the modes involved. In the case of optical vibrations, we observe even more pronounced GHS values, exceeding 30 times the incident wavelength. This demonstrates the potential of GHS in acoustical systems, which opens up possibilities for applications in the design of acoustic devices.&#xD.