Optical Spectroscopy of Polytypic Quantum Wells in SiC

Optical characterization is used to study spontaneously formed polytypic quantum well structures in lightly doped epilayers on heavily doped ([N] > 3X1019 cm-3) 4H-SiC substrates. Low temperature (1.8 K) photoluminescence (PL) shows emission from the wells in both epilayer and substrate, the latt...

Full description

Saved in:
Bibliographic Details
Main Authors: Samson, G, Chen, L, Skromme, B J, Wang, R, Li, C, Bhat, I
Format: Conference Proceeding
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Optical characterization is used to study spontaneously formed polytypic quantum well structures in lightly doped epilayers on heavily doped ([N] > 3X1019 cm-3) 4H-SiC substrates. Low temperature (1.8 K) photoluminescence (PL) shows emission from the wells in both epilayer and substrate, the latter occurring at higher energy. A self-consistent model of the quantum wells including polarization charge is used to explain the results. Raman scattering data provide direct evidence of depletion of the 4H barriers in the substrate due to modulation doping into these wells.
ISSN:0094-243X
DOI:10.1063/1.1994442