Si/Al2O3/ZnO:Al capacitor arrays formed in electrochemically etched porous Si by atomic layer deposition

High surface area Si/Al2O3/ZnO:Al capacitors were formed in electrochemically etched porous silicon. The Al2O3 dielectric and the ZnO:Al top electrode were deposited by atomic layer deposition in high aspect ratio porous Si. A single capacitor with a typical area of about 1mm2 consisted of about 105...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2007-02, Vol.84 (2), p.313-318
Main Authors: KEMELL, Marianna, RITALA, Mikko, LESKELÄ, Markku, OSSEI-WUSU, Emmanuel, CARSTENSEN, Jürgen, FOIL, Helmut
Format: Article
Language:English
Subjects:
Applied sciences
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High surface area Si/Al2O3/ZnO:Al capacitors were formed in electrochemically etched porous silicon. The Al2O3 dielectric and the ZnO:Al top electrode were deposited by atomic layer deposition in high aspect ratio porous Si. A single capacitor with a typical area of about 1mm2 consisted of about 105 pores. Effective capacitance densities were between 2.0 and 2.5muF/cm2, i.e., approximately 30 times higher than for a planar capacitor prepared under identical conditions, illustrating the effect of the enhanced surface area in the porous structure.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2006.10.085