Early 8Li+beta-NMR investigations in GaAs and Ge

• Published in: Physica. B, Condensed matter Condensed matter, 2006-03, Vol.374-375, p.415-418
• Main Authors: Chow, K H, Salman, Z, MacFarlane, W A, Campbell, Brendan, Keeler, T A, Kiefl, R F, Kreitzman, S R, Levy, C D P, Morris, G D, Parolin, T J, Daviel, S, Yamani, Z
• Format: Article
• Language: English
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2005.11.120

In this paper, we describe initial studies of the structure and dynamics associated with in bulk crystalline GaAs and Ge. At low temperatures in GaAs, the amplitude of the resonance signal at indicates that a large fraction (at least 70%) of the Li end up in locations with cubic symmetry (i.e. the tetrahedral interstitial and substitutional sites). The linewidth of the beta-NMR resonance increases dramatically above 150K, reaches a maximum at about 290K, and decreases again. This suggests that the Li starts to change its location, probably from an interstitial to a substitutional site, at . Experiments in Ge are also described. In this sample, a narrow resonance is seen at low temperatures that is likely due to Li located at an interstitial site. Near room temperature, it appears that Li is converting to another site.