Silicon nitride films by chemical vapor deposition in fluidized bed reactors at atmospheric pressure (AP/FBR-CVD)

Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl 4 and NH 3 in a reducing atmosphere at temperatures in the range 725–775 °...

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Bibliographic Details
Published in:Surface & coatings technology 2005-11, Vol.200 (5), p.1719-1723
Main Authors: Perez-Mariano, J., Borros, S., Picas, J.A., Forn, A., Colominas, C.
Format: Article
Language:English
Subjects:
Applied sciences
Chemical Vapor Deposition
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
FBR-CVD
Fluidized bed
Materials science
Metals. Metallurgy
Other topics in materials science
Physics
Production techniques
Silicon nitride
Surface treatment
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Summary:Silicon nitride thin films with thicknesses around 1 μm were deposited on AISI316 steel by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). The films were obtained by reaction of SiCl 4 and NH 3 in a reducing atmosphere at temperatures in the range 725–775 °C. They were amorphous and substoichiometric. Activation of the bed particles through alternating reaction steps resulted in a higher deposition rate. The formation of chromium nitride was detected for several microns beneath the film. The deposition temperature was found to have a great influence in their morphology and mechanical properties. The coatings presented hardness values up to 26 GPa.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2005.08.069