SHI induced silicide formation and surface morphology at Co/Si system

Ion beam mixing is a useful technique to produce modifications at the surface and interface of the solid material. In the present work, ion beam induced modifications at Co/Si interface using 120 MeV Au-ion irradiation has been studied at ion fluences in the range of 10 12 to 10 14 ions/cm 2 by seco...

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Bibliographic Details
Published in:Applied surface science 2006-11, Vol.253 (3), p.1165-1169
Main Authors: Agarwal, Garima, Sharma, Pratibha, Jain, I.P.
Format: Article
Language:English
Subjects:
Interface
Ion beam mixing
Ion irradiation
Silicide
Surface
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Summary:Ion beam mixing is a useful technique to produce modifications at the surface and interface of the solid material. In the present work, ion beam induced modifications at Co/Si interface using 120 MeV Au-ion irradiation has been studied at ion fluences in the range of 10 12 to 10 14 ions/cm 2 by secondary ion mass spectroscopy (SIMS) technique and calculated mixing efficiency at the interface. Silicide formation has been discussed on the basis of swift heavy ion (SHI) irradiation induced effects. Surface morphology and roughness of irradiated system with fluence 5 × 10 13 and 1 × 10 14 ions/cm 2 is studied by scanning tunneling microscopy (STM). Roughness of the surface shows marks of melting process and confirms the appearance of some pinholes in the reacted Co/Si system. Comparative study was also undertaken on annealed sample at 300 °C and then irradiated at a dose 1 × 10 14 ions/cm 2.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2006.01.059