Scattering of charge carriers by tin impurities in polycrystalline Si-Ge alloys

Carrier mobility in Sn-doped Si-Ge (85 at % Si) alloys has been determined at doping levels from 4.3 X 10 to 1.1 X 10 cm (0-0.21 at % Sn) using 300-K electrical measurements. The hole mobility has been shown to decrease with increasing Sn concentration. Comparison of experimental data with theoretic...

Full description

Saved in:
Bibliographic Details
Published in:Inorganic materials 2006-04, Vol.42 (4), p.346-348
Main Authors: Khutsishvili, E. V., Kekelidze, N. P., Jzhakeli, V. G., Pagava, M. O.
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Carrier mobility in Sn-doped Si-Ge (85 at % Si) alloys has been determined at doping levels from 4.3 X 10 to 1.1 X 10 cm (0-0.21 at % Sn) using 300-K electrical measurements. The hole mobility has been shown to decrease with increasing Sn concentration. Comparison of experimental data with theoretical predictions suggests that the Sn atoms in Si-Ge alloys behave neither as neutral nor as ionized scattering centers. Estimates indicate that, at Sn concentrations from 4.3 X 10 to 1.1 X 10 cm, the scattering of current carriers is mainly due to the disordered Sn distribution.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168506040029