Semimetal- Semiconductor Transition in Bi Nanowires

• Main Authors: Nikolaeva, A A, Gitsu, D V, Huber, T E, Konopko, L A, Para, Gh
• Format: Conference Proceeding
• Language: English
• ISSN: 0094-243X
• DOI: 10.1063/1.2355246

For the first time it was revealed, that the temperature dependent resistance R(T) of individual single Bi wires (d70 nm) have 'semiconductor' character. It was found that in nanowires with d < 80 nm the thermopower at the absent magnetic field did not exceed 80 muV/K. 'Semiconductor' conductivity of the 50 nm wire transformed into the 'metallic' one under the influence of elastic deformation and magnetic field in the region of 40-4.2 K. The deformation resistance R() curve for 50 nm Bi wire at 4.2K corresponds to characteristic dependences R() of wires Bi-0.0025 at.% Tc, at which the Fermi level EF is located near the valence band top in T-point of the Brillouin zone. Such and 'semiconductor' dependence R(T) of 50 nm Bi wire points that there is the possibility of semimetal to semiconductor transition as a result of the quantum size effect.