Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties

Wurtzite ZnSe nanowires were prepared on GaAs substrates in a metal-organic chemical vapour deposition system. Electron microscopy shows that they are smooth and uniform in size. Both transmission electron microscopy and x-ray diffraction reveal the wurtzite structure of the nanowires, which grows a...

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Bibliographic Details
Published in:Nanotechnology 2006-11, Vol.17 (22), p.5561-5564
Main Authors: Shan, C X, Liu, Z, Zhang, X T, Wong, C C, Hark, S K
Format: Article
Language:English
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Summary:Wurtzite ZnSe nanowires were prepared on GaAs substrates in a metal-organic chemical vapour deposition system. Electron microscopy shows that they are smooth and uniform in size. Both transmission electron microscopy and x-ray diffraction reveal the wurtzite structure of the nanowires, which grows along the [Formula: see text] direction. Raman scattering studies on individual nanowires were performed in the back-scattering geometry at room temperature. Besides the commonly observed longitudinal and transverse optical phonon modes, a possible surface mode located at 233 cm(-1) is also observed in the Raman spectrum. A peak located at 2.841 eV was clearly observed in the photoluminescence spectra of the nanowires, which can be assigned to near band edge emissions of wurtzite ZnSe.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/17/22/006