Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic polarization model

We have realized Al2O3 metal-insulator-metal (MIM) capacitors of three different thicknesses ranging from 7 to 20 nm, and performed capacitance versus voltage characterizations of the samples between 25 and 150 deg C. The MIM capacitors presented increasing capacitance densities with temperature and...

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Bibliographic Details
Published in:Microelectronic engineering 2006-11, Vol.83 (11-12), p.2422-2426
Main Authors: BECU, S, CREMER, S, AUTRAN, J. L
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We have realized Al2O3 metal-insulator-metal (MIM) capacitors of three different thicknesses ranging from 7 to 20 nm, and performed capacitance versus voltage characterizations of the samples between 25 and 150 deg C. The MIM capacitors presented increasing capacitance densities with temperature and parabolic C-V curves with a positive curvature. These results are widely observed in MIM capacitors with high-K dielectrics such as HfO2 [1], Ta2O5 [2] or Y2O3 [3], but non-linearity origins are rarely reported in literature. In this article, an attempt has been made to estimate the non-linearity of the permittivity in Al2O3 dielectric, assuming that electronic polarization did not contribute to the non-linearity.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2006.10.049