Surface and interface characteristics of SiC coatings by chemical vapor deposition

• Published in: Journal of materials science 2005-04, Vol.40 (8), p.2109-2111
• Main Authors: LIU, Rong-Jun, ZHANG, Chang-Rut, LIU, Xiao-Yang, ZHOU, Xin-Gui, CAO, Ying-Bin
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Organic chemistry; Physics; Solid surfaces and solid-solid interfaces; Structure and morphology; thickness; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-2461; 1573-4803
• DOI: 10.1007/s10853-005-1248-9

SiC coatings (films) have been grown by many investigators using CVD techniques in the past years and almost all of the research has focused on the following issues: (a) process conditions such as deposition temperature, pressure, flow rate ratio of carrying gas to diluent gas, (b) thermodynamic or kinetic study of CVD SiC, (c) SiC crystal growth mechanism. However to date has seen no reports on the difference of structure and composition between the surface and interface in CVD SiC coatings. The current work studied the surface structures of CVD SiC coatings as well as the microstructure of the interface between the SiC coatings and the substrates. (Substrates: SiCp/SiC composites and graphite.)