Study of muonium precession signals in optically excited silicon

Many of the experiments on muonium interacting with photo-excited carriers are conducted at pulsed muon beam facilities and typically concentrate on studying the muon polarization in a longitudinal magnetic field. In this paper, we discuss some of the early progress we have recently made in carrying...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2006-03, Vol.374, p.412-414
Main Authors: Schultz, B.E., Hitti, B., Salman, Z., MacFarlane, W.A., Bani-Salameh, H.N., Lichti, R.L., Fan, I., Jung, J., Chow, K.H.
Format: Article
Language:English
Subjects:
Muonium
Optical excitation
Precession
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Summary:Many of the experiments on muonium interacting with photo-excited carriers are conducted at pulsed muon beam facilities and typically concentrate on studying the muon polarization in a longitudinal magnetic field. In this paper, we discuss some of the early progress we have recently made in carrying out optical excitation experiments on semiconductors at a continuous beam facility, i.e. TRIUMF. Here, additional information is potentially available because the muon precession signatures associated with the various paramagnetic and diamagnetic muonium signals can be monitored directly. Some results in high-resistivity Si are presented.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2005.11.119