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Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers on Si (111) substrates grown by metalorganic chemical vapor deposition with trimethylaluminum (TMA) pretreatments have been studied using atomic force microscopy (AFM)...
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| Published in: | Journal of crystal growth 2004-08, Vol.268 (3-4), p.515-520 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| container_end_page | 520 |
| container_issue | 3-4 |
| container_start_page | 515 |
| container_title | Journal of crystal growth |
| container_volume | 268 |
| creator | Zang, K Y Wang, L S Chua, S J Thompson, C V |
| description | AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers on Si (111) substrates grown by metalorganic chemical vapor deposition with trimethylaluminum (TMA) pretreatments have been studied using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM results show that with TMA pretreatment, AlN nucleates under a pseudo-two dimensional growth mode due to the enhanced lateral growth rate and improved wetting property of AlN on silicon. In addition, with TMA pretreatment, absence of amorphous SiNx layer at the interface demonstrates good crystalline quality. Transmission electron diffraction patterns reveal epitaxial crystallographic orientation: AlN[0 0 0 1]||Si[1 1 1] and . High-resolution TEM measurements also indicate a 5:4 lattice matching relationship for AlN and Si along the Si [110] direction. |
| doi_str_mv | 10.1016/j.jcrysgro.2004.04.083 |
| format | article |
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The microstructures of high-temperature AlN nucleation layers on Si (111) substrates grown by metalorganic chemical vapor deposition with trimethylaluminum (TMA) pretreatments have been studied using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM results show that with TMA pretreatment, AlN nucleates under a pseudo-two dimensional growth mode due to the enhanced lateral growth rate and improved wetting property of AlN on silicon. In addition, with TMA pretreatment, absence of amorphous SiNx layer at the interface demonstrates good crystalline quality. Transmission electron diffraction patterns reveal epitaxial crystallographic orientation: AlN[0 0 0 1]||Si[1 1 1] and . High-resolution TEM measurements also indicate a 5:4 lattice matching relationship for AlN and Si along the Si [110] direction.</description><identifier>ISSN: 0022-0248</identifier><identifier>DOI: 10.1016/j.jcrysgro.2004.04.083</identifier><language>eng</language><ispartof>Journal of crystal growth, 2004-08, Vol.268 (3-4), p.515-520</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zang, K Y</creatorcontrib><creatorcontrib>Wang, L S</creatorcontrib><creatorcontrib>Chua, S J</creatorcontrib><creatorcontrib>Thompson, C V</creatorcontrib><title>Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)</title><title>Journal of crystal growth</title><description>AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers on Si (111) substrates grown by metalorganic chemical vapor deposition with trimethylaluminum (TMA) pretreatments have been studied using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM results show that with TMA pretreatment, AlN nucleates under a pseudo-two dimensional growth mode due to the enhanced lateral growth rate and improved wetting property of AlN on silicon. In addition, with TMA pretreatment, absence of amorphous SiNx layer at the interface demonstrates good crystalline quality. Transmission electron diffraction patterns reveal epitaxial crystallographic orientation: AlN[0 0 0 1]||Si[1 1 1] and . 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The microstructures of high-temperature AlN nucleation layers on Si (111) substrates grown by metalorganic chemical vapor deposition with trimethylaluminum (TMA) pretreatments have been studied using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM results show that with TMA pretreatment, AlN nucleates under a pseudo-two dimensional growth mode due to the enhanced lateral growth rate and improved wetting property of AlN on silicon. In addition, with TMA pretreatment, absence of amorphous SiNx layer at the interface demonstrates good crystalline quality. Transmission electron diffraction patterns reveal epitaxial crystallographic orientation: AlN[0 0 0 1]||Si[1 1 1] and . High-resolution TEM measurements also indicate a 5:4 lattice matching relationship for AlN and Si along the Si [110] direction.</abstract><doi>10.1016/j.jcrysgro.2004.04.083</doi><tpages>6</tpages></addata></record> |
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| title | Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111) |
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