SiOxNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using HMDS-O2-NH3-Ar gas mixtures

• Published in: Surface & coatings technology 2007-02, Vol.201 (9-11), p.4957-4960
• Main Authors: LEE, J. H, JEONG, C. H, LIM, J. T, ZAVALEYEV, V. A, KYUNG, S. J, YEOM, G. Y
• Format: Article
• Language: English
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Production techniques; Surface treatment
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2006.07.075

In this study, SiOxNy thin film was deposited by plasma enhanced chemical vapor deposition at the temperature lower than 40 deg C using hexamethyldisilazane (HMDS)/Ar while varying the ratio of O2/NH3. And, its physical and chemical characteristics of the deposited SiOxNy as a diffusion barrier to water permeation applied to organic thin film transistors (OTFTs) were investigated. When oxygen ratio (R) in O2/NH3 (R=O2/(O2+NH3) was lower than 0.3, due to the high remaining binding states such as -CHx and N-H in the deposited film, the deposited film was soft and easily peeled off. With increasing R, oxygen-rich, hard, and transparent SiOxNy thin film was deposited with lower -CHx and N-H. When a thin film composed of parylene (100nm)/SiOxNy (60nm)/parylene (100nm) was formed on the polyethersulfone (PES, 200mum) film with SiOxNy deposited with R=0.5, water vapor transmission rate (WVTR) of 0.3gm/(m2 day) could be obtained. It is believed that, by using a multilayer SiOxNy structure, the WVTR required for OTFTs (10-2gm/(m2 day) could be obtained.