Structural and optical changes in As2S3 thin films induced by light ion irradiation

The influence of H+ and D+ ion irradiation and laser illumination on the optical absorption edge, the refractive index and the Raman scattering spectra of as‐deposited and annealed As2S3 films have been investigated. It was established, that a significant similarity exists between optical changes in...

Full description

Saved in:
Bibliographic Details
Published in:Physica status solidi. A, Applied research Applied research, 2004-11, Vol.201 (14), p.3193-3199
Main Authors: Ivan, I., Veres, M., Pócsik, I., Kokenyesi, S.
Format: Article
Language:English
Subjects:
61.43.Dq
61.80.Jh
78.20.Ci
78.30.Ly
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of H+ and D+ ion irradiation and laser illumination on the optical absorption edge, the refractive index and the Raman scattering spectra of as‐deposited and annealed As2S3 films have been investigated. It was established, that a significant similarity exists between optical changes induced in As2S3 films by light illumination and by irradiation with light ions and also between structural changes thought to be responsible for these effects.The changes are connected with electron excitation processes in both cases and further initiation of atomic rearrangements within the amorphous phase. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.200406890