Study of ashing for low-k dielectrics using the N2/O2 ferrite-core inductively coupled plasmas

We have studied the characteristics of photoresist (PR) ashing using N2/O2 plasmas in ferrite-core inductively coupled plasma etcher. By varying the O2/(O2+N2) gas flow ratio, we have changed the PR ash rate and the low-k material etch rate, obtaining the PR ash rate and the PR to low-k materials et...

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Bibliographic Details
Published in:Thin solid films 2006-05, Vol.506-507 (Complete), p.222-224
Main Authors: Kim, H W, Myung, J H, Kim, N H, Lee, H S, Park, S G, Lee, J G, Chung, C W, Park, W J, Kang, C J, Yoo, C G, Ko, K H, Woo, J H, Choi, S D, Choi, D K
Format: Article
Language:English
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Summary:We have studied the characteristics of photoresist (PR) ashing using N2/O2 plasmas in ferrite-core inductively coupled plasma etcher. By varying the O2/(O2+N2) gas flow ratio, we have changed the PR ash rate and the low-k material etch rate, obtaining the PR ash rate and the PR to low-k materials etch selectivity, respectively, of 15,000 A/min and 180. Fourier transform infrared spectroscopy and HF etch test coincidentally indicated that the ash damage to the low-k material decreased with decreasing the O2/(O2+N2) gas flow ratio.
ISSN:0040-6090
DOI:10.1016/j.tsf.2005.08.089