Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper

An important component of the slurries used in chemical mechanical planarization (CMP) is an appropriately chosen corrosion/dissolution inhibitor, which facilitates selective material removal from protrusions while protecting recessed regions of the surface. The present work demonstrates the utility...

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Bibliographic Details
Published in:Journal of materials research 2005-12, Vol.20 (12), p.3413-3424
Main Authors: Hong, Y., Patri, U.B., Ramakrishnan, S., Roy, D., Babu, S.V.
Format: Article
Language:English
Subjects:
Adsorption
Microelectronics
Thin film
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Summary:An important component of the slurries used in chemical mechanical planarization (CMP) is an appropriately chosen corrosion/dissolution inhibitor, which facilitates selective material removal from protrusions while protecting recessed regions of the surface. The present work demonstrates the utility of two environmentally benign anionic surfactants, sodium dodecyl sulfate (SDS) and ammonium dodecyl sulfate (ADS) as dissolution inhibitors. Using a standard slurry (1 wt% glycine with 5 wt% H2O2 at pH = 4.0) typically used for Cu CMP and combining measurements of open circuit potentials and contact angles with those of Cu removal rates, we show that both SDS and ADS suppress chemical dissolution and polish rates of Cu. The dissolution inhibition efficiencies of ADS and SDS measured in these experiments are found to be superior to those of benzotriazole (BTA), a traditional inhibiting agent used for copper CMP.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2005.0419