Synthesis and structural properties of GaN particles from GaO2H powders

Gallium nitride(GaN) powders have been synthesized by nitriding gallium oxyhydroxide (GaO2H) powders in the flow of NH3 gas at a nitridation temperature of 950 deg C for 35 min. X-ray powder diffraction (XRD) patterns and Fourier transform infrared (FTIR) spectra reveal that simple heat treatment of...

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Bibliographic Details
Published in:Diamond and related materials 2005-10, Vol.14 (10), p.1730-1734
Main Authors: XIAO, Hong-Di, MA, Hong-Lei, XUE, Cheng-Shan, HU, Wen-Rong, JIN MA, ZONG, Fu-Jian, ZHANG, Xi-Jian, FENG JI
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:Gallium nitride(GaN) powders have been synthesized by nitriding gallium oxyhydroxide (GaO2H) powders in the flow of NH3 gas at a nitridation temperature of 950 deg C for 35 min. X-ray powder diffraction (XRD) patterns and Fourier transform infrared (FTIR) spectra reveal that simple heat treatment of GaO2H in the flow of NH3 leads to the formation of hexagonl GaN with lattice constants a = 3.191 A, and c = 5.192 A at 950 deg C through intermediate conversion of beta-Ga2O3. X-ray photo-electron spectroscopy (XPS) confirms the formation of bonding between Ga and N, and yields that the surface stoichiometry of Ga : N approximates 1 : 1. Transmission electron microscopy (TEM) image indicates that GaN particle is a single crystal, and its morphology is ruleless.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2005.06.024