Towards Tunneling Through a Single Dopant Atom

• Main Authors: Caro, J, Smit, G D J, Sellier, H, Loo, R, Caymax, M, Rogge, S, Klapwijk, T M
• Format: Conference Proceeding
• Language: English
• ISSN: 0094-243X
• DOI: 10.1063/1.1994725

Aiming for atom-based functionality, we study self-assembled CoSi2/Si Schottky nanodiodes and CVD-grown Si -doped p+/p-/p+ tunneling devices. Due to their smallness, the CoSi2/Si diodes comprise only a limited number of dopant atoms in the Schottky barrier. Transport through the smaller diodes is dominated by randomly positioned individual dopant atoms, as reflected in device-to-device conductance fluctuations at 300 K and resonant tunneling peaks at 4.5 K. The layered structure of the -doped devices has the promise of better control over active atoms. Indeed, in large p+/p-/p+ devices the boron atoms in the -layer induce resonant tunneling through the B+ state of these atoms. The resonance position shifts to higher voltages in a magnetic field, which is interpreted as a diamagnetic shift.