Triangular pattern formation on silicon through self-organization of GaN nanoparticles

Nanoparticles of gallium nitride, synthesized by a low-temperature reaction between triethyl gallium and ammonia, were introduced onto silicon wafers containing a thin layer of chemically prepared silicon dioxide. At room temperature, the nanoparticles form unstructured agglomerates on the surface....

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Bibliographic Details
Published in:Applied surface science 2007-03, Vol.253 (10), p.4773-4776
Main Authors: Prabhakaran, Kuniyil, Schwenzer, Birgit, DenBaars, Steven P., Mishra, Umesh K.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
GaN
Luminescent
Nanoparticles
Physics
Self-organization
Silicon
Triangular pattern
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Summary:Nanoparticles of gallium nitride, synthesized by a low-temperature reaction between triethyl gallium and ammonia, were introduced onto silicon wafers containing a thin layer of chemically prepared silicon dioxide. At room temperature, the nanoparticles form unstructured agglomerates on the surface. However, upon annealing the samples beyond the decomposition temperature of the silicon dioxide layer, the gallium nitride particles self-organize to form triangular structures. The pattern formation is attributed to the domain separation associated with the (1×1)–(7×7) surface phase transformation followed by selective incorporation of the nanoparticles.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2006.10.062