The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE

InAs sandwiched between AlGaAsSb insulating layers lattice matched to InAs were grown by molecular beam epitaxy and the InAs thickness dependence of the electrical and temperature properties were studied. The results of this study show that the AlGaAsSb insulating layers almost eliminated a large la...

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Bibliographic Details
Published in:Journal of crystal growth 2005-05, Vol.278 (1), p.162-166
Main Authors: Shibasaki, Ichiro, Geka, Hirotaka, Okamoto, Atsushi, Shibata, Yosihiko
Format: Article
Language:English
Subjects:
A3. Molecular beam epitaxy
A3. Quantum wells
B1. Antimonides
B1. Indium arsenide
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
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Summary:InAs sandwiched between AlGaAsSb insulating layers lattice matched to InAs were grown by molecular beam epitaxy and the InAs thickness dependence of the electrical and temperature properties were studied. The results of this study show that the AlGaAsSb insulating layers almost eliminated a large lattice mismatch effect at InAs/GaAs hetero-interface and have increased electron mobility of InAs layer. It was also shown that the electron mobility and sheet electron density of InAs layer have a substantial thickness dependence. The temperature dependence of the electron mobility and sheet electron densities also discussed with respect to InAs thickness.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.12.088