Enhanced Performance of Si Nanocrystal LEDs by Using Ni∕Ag/Indium Tin Oxide Contact

The Ni/Ag/indium tin oxide (ITO) contacts to n-SiC films for silicon-nanocrystal (nc-Si) light-emitting diodes (LEDs) were investigated. The electrical properties of the nc-Si LED with a thin Ni/Ag interlayer was improved compared to that of the nc-Si LED without one. This was attributed to a decrea...

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2007, Vol.10 (1), p.J9-J11
Main Authors: Huh, Chul, Shin, Jae-Heon, Kim, Kyung-Hyun, Choi, Chel-Jong, Cho, Kwan Sik, Hong, Jongcheol, Sung, Gun Yong
Format: Article
Language:English
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Summary:The Ni/Ag/indium tin oxide (ITO) contacts to n-SiC films for silicon-nanocrystal (nc-Si) light-emitting diodes (LEDs) were investigated. The electrical properties of the nc-Si LED with a thin Ni/Ag interlayer was improved compared to that of the nc-Si LED without one. This was attributed to a decrease in the contact resistance due to the interfacial reaction at the contact region, which was confirmed by Auger depth profiles and HRTEM. In addition, the light output power at a current of 20 mA was also enhanced by around 35%. This result strongly indicates that the Ni/Ag/ITO contact can serve as a highly promising contact scheme to enhance the efficiency of the nc-Si LEDs. 18 refs.
ISSN:1099-0062
DOI:10.1149/1.2363925