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Poly(2,5-bis(2-thienyl)-3,6-dialkylthieno [3,2-b]thiophene)s-High-Mobility Semiconductors for Thin-Film Transistors
Field‐effect transistor properties, structural design, synthesis, and characterization of the poly(2,5‐bis(2‐thienyl)‐3,6‐dialkylthieno[3,2‐b]thiophene) thin‐film semiconductors shown in the figure are described. Using low‐temperature solution fabrication of channel semiconductors under ambient cond...
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Published in: | Advanced materials (Weinheim) 2006-11, Vol.18 (22), p.3029-3032 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Field‐effect transistor properties, structural design, synthesis, and characterization of the poly(2,5‐bis(2‐thienyl)‐3,6‐dialkylthieno[3,2‐b]thiophene) thin‐film semiconductors shown in the figure are described. Using low‐temperature solution fabrication of channel semiconductors under ambient conditions, a mobility of 0.25 cm2 V–1 s–1 and a current on/off ratio of 107 are obtained. |
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ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.200601204 |