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Poly(2,5-bis(2-thienyl)-3,6-dialkylthieno [3,2-b]thiophene)s-High-Mobility Semiconductors for Thin-Film Transistors

Field‐effect transistor properties, structural design, synthesis, and characterization of the poly(2,5‐bis(2‐thienyl)‐3,6‐dialkylthieno[3,2‐b]thiophene) thin‐film semiconductors shown in the figure are described. Using low‐temperature solution fabrication of channel semiconductors under ambient cond...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2006-11, Vol.18 (22), p.3029-3032
Main Authors: Li, Y., Wu, Y., Liu, P., Birau, M., Pan, H., Ong, B. S.
Format: Article
Language:English
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Summary:Field‐effect transistor properties, structural design, synthesis, and characterization of the poly(2,5‐bis(2‐thienyl)‐3,6‐dialkylthieno[3,2‐b]thiophene) thin‐film semiconductors shown in the figure are described. Using low‐temperature solution fabrication of channel semiconductors under ambient conditions, a mobility of 0.25 cm2 V–1 s–1 and a current on/off ratio of 107 are obtained.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200601204