Trion Assisted Tunneling In Double Barrier Diodes

We have measured the current-voltage (I(V)) characteristics and the photoluminescence emission of GaAs-GaAlAs n-i-n double barrier diodes. We have observed a pre-resonance shoulder in the I(V) curves under high laser intensities. We have also detected negative charged excitons in the photoluminescen...

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Bibliographic Details
Main Authors: Vercik, A, Camps, I, Gobato, Y Galvao, Brasil, MJSP, Marques, G E, Makler, S S
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:We have measured the current-voltage (I(V)) characteristics and the photoluminescence emission of GaAs-GaAlAs n-i-n double barrier diodes. We have observed a pre-resonance shoulder in the I(V) curves under high laser intensities. We have also detected negative charged excitons in the photoluminescence spectra under the same bias voltage. The pre-resonance shoulder was associated to the dissociation of these complexes either by thermal excitation or by scattering with 'free' carriers in the quantum well. A simple phenomenological rate equation model allows us to explain the kinetics of excitonic complexes on double barrier devices.
ISSN:0094-243X
DOI:10.1063/1.1994194