Temperature and drain voltage dependence of gate-induced drain leakage

The aim of this paper is to develop a simple and accurate model of the gate induced drain leakage (GIDL) of MOSFET's that can be easily implemented in a circuit simulator. We use an analytical expression of band-to-band tunneling in the case of trap-free gate oxide. The dependence of the GIDL c...

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Bibliographic Details
Published in:Microelectronic engineering 2004-04, Vol.72 (1), p.101-105
Main Authors: Lopez, L, Masson, P, Née, D, Bouchakour, R
Format: Article
Language:English
Subjects:
Applied sciences
Band to band tunneling
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
GIDL
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Theoretical study. Circuits analysis and design
Transistors
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Summary:The aim of this paper is to develop a simple and accurate model of the gate induced drain leakage (GIDL) of MOSFET's that can be easily implemented in a circuit simulator. We use an analytical expression of band-to-band tunneling in the case of trap-free gate oxide. The dependence of the GIDL current with temperature and with the drain potential is studded and modeled in the case of a n-MOS transistor. A methodology of parameter extraction is proposed.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2003.12.024