Two-dimensional electrons at n-GaAs/AlGaAs heterointerface under uniaxial compression

• Published in: Physica Status Solidi (b) 2007-01, Vol.244 (1), p.65-69
• Main Authors: Minina, N. Ya, Bogdanov, E. V., Ilievsky, A. A., Polyansky, A. V., Kraak, W., Savin, A. M., Berman, I. V.
• Format: Article
• Language: English
• Subjects: 62.50.+p; 73.20.−r; 73.40.Kp
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.200672529

It has been shown that under uniaxial compression P applied at low temperatures the transport properties of 2D electrons at a n‐(001)GaAs/Alx Ga1–x As heterointerface are governed mainly by the piezoelectric field. It arises across the structure in the [001] direction when the stress is applied in the [110] or [1$ \bar 1 $0] directions and causes the corresponding compensating redistribution of charges that increases the 2D electron concentration in a quantum well if P ‖[110] and decreases it if P ‖[1$ \bar 1 $0]. The anisotropy of the 2D electron mobility does not significantly change under uniaxial stress up to 3.5 kbar and does not indicate the change of the energy spectrum anisotropy that takes place in a 2D hole system under compression. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)