Effect of the chemical structure of silyl derivatives of unsymmetrical dimethylhydrazine on the composition and structure of silicon carbonitride films: Theoretical and experimental studies

Quantum-chemical calculations are used to analyze the homolytic decomposition of 1,1-dimethyl-2-(dimethylhydrazino)silane (DMDMHS) and bis(2,2-dimethylhydrazino)dimethylsilane (bisDMHDMS)-precursors for the growth of silicon carbonitride films. The results indicate that the homolytic decomposition o...

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Bibliographic Details
Published in:Inorganic materials 2007-04, Vol.43 (4), p.373-378
Main Authors: Smirnova, T. P., Shainyan, B. A., Borisov, V. O., Rakhlin, V. I.
Format: Article
Language:English
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Summary:Quantum-chemical calculations are used to analyze the homolytic decomposition of 1,1-dimethyl-2-(dimethylhydrazino)silane (DMDMHS) and bis(2,2-dimethylhydrazino)dimethylsilane (bisDMHDMS)-precursors for the growth of silicon carbonitride films. The results indicate that the homolytic decomposition of DMDMHS is a highly endothermic process, whereas bisDMHDMS decomposition is almost thermally neutral, owing to the strong bond in the N2 molecule. This indicates that the probability of the breaking of the Si-N bond and the formation of volatile silanes, free of nitrogen, is higher in bisDMHDMS, and accounts for the absence of Si-C groups in films grown from this precursor at room temperature. The conclusions drawn from quantum-chemical calculations are supported by experimental data on the growth kinetics, chemical structure, and composition of layers grown from DMDMHS and bisDMHDMS.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168507040085