Characterization of In/Pd and Pd/In/Pd thin films by ellipsometric, XRD and AES methods

In/Pd and Pd/In/Pd thin films were prepared by thermal evaporation on the SiO2 substrate in a vacuum. The structural and optical properties of the films were investigated by means of X-ray diffractometry (XRD), Auger electron spectroscopy (AES) and spectroscopic ellipsometry (SE). Auger depth profil...

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Bibliographic Details
Published in:Applied surface science 2007-01, Vol.253 (7), p.3367-3371
Main Authors: WRONKOWSKA, A. A, WRONKOWSKI, A, BUKALUK, A, TRZCNSKI, M, OKULEWICZ, K
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
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Summary:In/Pd and Pd/In/Pd thin films were prepared by thermal evaporation on the SiO2 substrate in a vacuum. The structural and optical properties of the films were investigated by means of X-ray diffractometry (XRD), Auger electron spectroscopy (AES) and spectroscopic ellipsometry (SE). Auger depth profile studies were performed in order to determine the composition of elements in the Pd-In systems. Interdiffusion of metals was detected at room temperature. Optical properties of Pd-In composite layers formed due to the interdiffusion were derived from ellipsometric quantities Psi and Delta measured in the photon energy range 0.75-6.50eV at different angles of incidence. The effective optical spectra show absorption peaks dependent on the composition of nonuniform films. The XRD patterns indicated formation of Pd1-xInx intermetallic phases in the samples.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2006.12.016