Advanced thermoelectrically cooled midwave HgCdTe focal plane arrays

• Published in: Journal of electronic materials 2004-06, Vol.33 (6), p.609-614
• Main Authors: CHU, Muren, MESROPIAN, S, TERTERIAN, S, GURGENIAN, H. K, PAULI, M
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Diodes; Doping and impurity implantation in iii-v and ii-vi semiconductors; Electronics; Exact sciences and technology; Ion implantation; Mercury cadmium telluride epitaxy; Optoelectronic devices; Photodiodes; phototransistors; photoresistors; Physics; Semiconductor doping; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Structure of solids and liquids; crystallography; Substrates
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-004-0055-4

Midwave HgCdTe diodes and arrays for a 200-230 K operation using thermo-electric (TE) coolers have been fabricated and characterized. The quality of ZnCdTe substrates for the epitaxial growth of HgCdTe layers plays a significant role in determining the performance of the devices. The best diode RoAs at 200 K and 230 K are 1.1 × 10^sup 3^ [Omega].cm^sup 2^ and 1.6 × 10^sup 2^ [Omega].cm^sup 2^, respectively. Fitting the diode RoAs to analytical equations, the hole lifetime between 230 K and 300 K is found to be on the order of 50 [mu]sec. Arrays in a format of 320 × 256 have been produced on the HgCdTe layers and imaging pictures have been obtained. [PUBLICATION ABSTRACT] Key words: HgCdTe, midwave, infrared, f'ocal plane array, heterojunction, ion implantation