Effect of Trimethylsilylation on the Film Stress of Mesoporous Silica Ultralow-k Film Stacks

The film stress of the ultralow-k mesoporous silica thin film and the -SiC:H/ mesoporous silica film stack was studied. The as-calcined mesoporous silica exhibits a tensile film stress due to its volume contraction during bake and calcination. Trimethylsilylation of the mesoporous film results in a...

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2006-01, Vol.9 (6), p.G215-G218
Main Authors: Chen, Jr-Yu, Pan, Fu-Ming, Lin, Da-Xien, Cho, An-Thung, Chao, Kuei-Jung, Chang, Li
Format: Article
Language:English
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Summary:The film stress of the ultralow-k mesoporous silica thin film and the -SiC:H/ mesoporous silica film stack was studied. The as-calcined mesoporous silica exhibits a tensile film stress due to its volume contraction during bake and calcination. Trimethylsilylation of the mesoporous film results in a spring-back effect and thereby improves the mechanical properties of the porous film. Deposition of a plasma-assisted -SiC:H layer on the mesoporous silica thin film can also relieve the tensile stress, and even made the film stack become compressively stressed. This is ascribed to the stress compensation and alkoxylation occurring during the -SiC:H deposition.
ISSN:1099-0062
DOI:10.1149/1.2193074