Comparison of MOS capacitors on n- and p-type GaN

The electrical characteristics of both n- and p-type GaN metal-oxide semiconductor (MOS) capacitors utilizing plasma-enhanced CVD-SiO^sub 2^ as the gate dielectric were measured. Both capacitance and conductance techniques were used to obtain the MOS properties (such as interface state density). Dev...

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Bibliographic Details
Published in:Journal of electronic materials 2006-04, Vol.35 (4), p.726-732
Main Authors: Huang, W, Khan, T, Chow, T Paul
Format: Article
Language:English
Subjects:
Capacitors
Charge density
Chemical vapor deposition
CMOS
Conduction bands
Density distribution
Gallium nitride epitaxy
Gallium nitrides
Metal oxide semiconductors
MOS devices
P-type semiconductors
Plasma enhanced chemical vapor deposition
Silica
Silicon dioxide
Ultraviolet radiation
Valence band
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Summary:The electrical characteristics of both n- and p-type GaN metal-oxide semiconductor (MOS) capacitors utilizing plasma-enhanced CVD-SiO^sub 2^ as the gate dielectric were measured. Both capacitance and conductance techniques were used to obtain the MOS properties (such as interface state density). Devices annealed at 1000°C/30 min. in N^sub 2^ yielded an interface state density of 3.8 × 10^sup 10^ cm^sup -2^ eV^sup -1^ at 0.19 eV from the conduction band edge, and it decreased to 1.1 × 10^sup 10^ cm^sup -2^ eV^sup -1^ deeper into the band gap. A total fixed oxide charge density of 8 × 10^sup 12^ q cm^sup -2^ near the valence band was estimated. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band was determined. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-006-0129-6