Carrier compensation in (001) n-type diamond by phosphorus doping

Phosphorus (P) doping of (001) diamond was investigated focusing on [CH 4]/[H 2] and [PH 3]/[CH 4] gas flow ratio dependence during homoepitaxial growth. P concentration was primarily controlled by gas flow ratio in the same manner as (111) doping, although the controllable range stayed narrow due t...

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Bibliographic Details
Published in:Diamond and related materials 2007-04, Vol.16 (4), p.796-799
Main Authors: Kato, Hiromitsu, Yamasaki, Satoshi, Okushi, Hideyo
Format: Article
Language:English
Subjects:
Carrier compensation
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Compensator
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
n-type conductivity
oriented diamond
Phosphorus doping
Physics
Specific materials
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Summary:Phosphorus (P) doping of (001) diamond was investigated focusing on [CH 4]/[H 2] and [PH 3]/[CH 4] gas flow ratio dependence during homoepitaxial growth. P concentration was primarily controlled by gas flow ratio in the same manner as (111) doping, although the controllable range stayed narrow due to lower doping efficiency. Electrical properties of (001) P-doped diamond films were investigated by Hall effect measurements and the doping level dependence of carrier compensation was discussed. The compensation ratio remained almost constant with increasing P concentration, indicating that P doping itself induces acceptor states compensating P donors.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2006.11.085