High temperature Hall sensors

In this contribution we report on the preparation of high temperature Hall sensors (HTHS). The maximum working temperature of the sensors is not less than 573 K (300 °C). The HTHS active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The InSb layer is protected from the hot ambie...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2007-05, Vol.136 (1), p.234-237
Main Authors: Oszwaldowski, Maciej, Berus, Tomasz
Format: Article
Language:English
Subjects:
Hall sensors
High temperatures
n-InSb/GaAs
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Summary:In this contribution we report on the preparation of high temperature Hall sensors (HTHS). The maximum working temperature of the sensors is not less than 573 K (300 °C). The HTHS active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The InSb layer is protected from the hot ambient by a 0.1 μm SiO x layer ( x ≤ 2). The magnetic sensitivity of the sensors is 0.1 V/(A T), its temperature coefficient is 0.02 %/K or less. The HTHS can also be used in the cryogenic temperature range without loosing their basic properties and advantages. Thus, the temperature range of the sensors applicability is unusually broad.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2006.11.023