High-speed epitaxial growth of AlN above by hydride vapor phase epitaxy

Aluminum nitride (AlN) epitaxial layer on sapphire (0001) substrate was grown at high temperatures above by hydride vapor phase epitaxy (HVPE). A high-temperature growth system was built by combining a conventional hot-wall type furnace and a heating susceptor with integrated heating element. This s...

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Bibliographic Details
Published in:Journal of crystal growth 2007-03, Vol.300 (1), p.42-44
Main Authors: Nagashima, Toru, Harada, Manabu, Yanagi, Hiroyuki, Kumagai, Yoshinao, Koukitu, Akinori, Takada, Kazuya
Format: Article
Language:English
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Summary:Aluminum nitride (AlN) epitaxial layer on sapphire (0001) substrate was grown at high temperatures above by hydride vapor phase epitaxy (HVPE). A high-temperature growth system was built by combining a conventional hot-wall type furnace and a heating susceptor with integrated heating element. This system realized growth of AlN by HVPE above even in the quartz reactor. Growth rates of AlN stay constant in the temperature range of . This result was consistent with the results expected from thermodynamic analysis, and represents that growth of AlN by HVPE is under mass transportation limited process even at high temperatures. Epitaxial growth of AlN with growth rate of was achieved at .
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2006.10.260