Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches

• Published in: Journal of electronic materials 2004-06, Vol.33 (6), p.543-551
• Main Authors: BENSON, J. D, STOLTZ, A. J, VARESI, J. B, MARTINKA, M, KALECZYC, A. W, ALMEIDA, L. A, BOYD, P. R, DINAN, J. H
• Format: Article
• Language: English
• Subjects: Anisotropy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Diamagnetic and cyclotron resonances; Etching; Exact sciences and technology; Ions; Magnetic resonances and relaxations in condensed matter, mössbauer effect; Materials science; Mercury cadmium telluride; Physics; Scanning electron microscopy; Surface cleaning, etching, patterning; Surface treatments
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-004-0044-7

Ion angular distribution (IAD) affects the width and aspect ratio in electron cyclotron resonance (ECR)-etched HgCdTe trenches. The IAD was determined by etching studies together with scanning electron microscopy (SEM) analysis. The results confirm that low-energy, large-angle ions contribute to the etching of the photoresist, while higher-energy, low-angle ions are responsible for HgCdTe etching. The HgCdTe ECR etching was further elucidated by sputter-bombardment theory. This model correctly predicts the nature and depth of the damage region in ECR-etched HgCdTe as well as the distribution and composition of the ejected material. [PUBLICATION ABSTRACT] Key words: Electron cyclotron resonance (ECR), etch bias, anisotropy, aspect ratio, HgCdTe, ion angular distribution (IAD)