Characterization of chemical bonding features and defect state density in HfSiOx Ny/SiO2 gate stack

We have studied depth profiling of the chemical composition, bonding features and defect states in 2 nm-thick HfSiOxNy (Hf/(Hf+Si)=43%) films with N content of 13 at.% before and after post-deposition annealing (PDA) at 1050 deg C in O2 and N2 ambience by using high-resolution x-ray photoelectron sp...

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Bibliographic Details
Published in:Microelectronic engineering 2007-09, Vol.84 (9-10), p.2386-2389
Main Authors: Ohta, A., Munetaka, Y., Tsugou, A., Makihara, K., Murakami, H., Higashi, S., Miyazaki, S., Inumiya, S., Nara, Y.
Format: Article
Language:English
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Summary:We have studied depth profiling of the chemical composition, bonding features and defect states in 2 nm-thick HfSiOxNy (Hf/(Hf+Si)=43%) films with N content of 13 at.% before and after post-deposition annealing (PDA) at 1050 deg C in O2 and N2 ambience by using high-resolution x-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS) in combination with oxide thinning by a dilute HF solution. NOx and Hf-Nx (x=2, 3) bonding units existing in the sample before PDA were effectively eliminated or reduced by PDA and Si-N and Hf-N bonds were the main N bonding features after PDA. We found the formation of a region with a low Si content and a residue of Hf-N2 bonding units in the HfSiOxNy film by O2-PDA in comparison to N2-PDA. The PYS measurements revealed a high density of filled defect states in such a Si-deficient region with a large number of Hf-N2 bonds.
ISSN:0167-9317
DOI:10.1016/j.mee.2007.04.135