Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer

Dislocation "half-loop arrays" (HLAs) in 4H-SiC homo-epilayers are studied by molten KOH etching and atomic force microscopy (AFM). It is found that the dislocation half-loops in an array exist at different depths in the epilayer, and they are aligned roughly but not exactly perpendicular...

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Bibliographic Details
Published in:Journal of electronic materials 2007-05, Vol.36 (5), p.539-542
Main Authors: ZHANG, Z, STAHLBUSH, R. E, PIROUZ, P, SUDARSHAN, T. S
Format: Article
Language:English
Subjects:
Applied sciences
Arrays
Chemical vapor deposition
Cold working, work hardening
annealing, quenching, tempering, recovery, and recrystallization
textures
Cross-disciplinary physics: materials science
rheology
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microelectronic fabrication (materials and surfaces technology)
Microscopy
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Theory and models of film growth
Treatment of materials and its effects on microstructure and properties
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Summary:Dislocation "half-loop arrays" (HLAs) in 4H-SiC homo-epilayers are studied by molten KOH etching and atomic force microscopy (AFM). It is found that the dislocation half-loops in an array exist at different depths in the epilayer, and they are aligned roughly but not exactly perpendicular to the off-cut direction. These results indicate that the dislocation half-loops in an array are not formed simultaneously, but the array extends by generation of new half-loops during growth. It is also demonstrated that the HLAs can be artificially induced by creating strain in the material, followed by annealing. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-007-0129-1