Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides : Sc2O3, Lu2O3, LaLuO3

Spectroscopy of internal photoemission, photoconductivity, and optical absorption is used to characterize the differences in the electronic structure of interfaces of silicon with several oxides (Sc2O3, Lu2O3, LaLuO3) grown as epitaxial layers or as amorphous films. As compared to their crystalline...

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Bibliographic Details
Published in:Microelectronic engineering 2007-09, Vol.84 (9-10), p.2278-2281
Main Authors: AFANAS' EV, V. V, SHAMUILIA, S, BADYLEVICH, M, STESMANS, A, EDGE, L. F, TIAN, W, SCHLOM, D. G, LOPES, J. M. J, ROECKERATH, M, SCHUBERT, J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Materials
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Summary:Spectroscopy of internal photoemission, photoconductivity, and optical absorption is used to characterize the differences in the electronic structure of interfaces of silicon with several oxides (Sc2O3, Lu2O3, LaLuO3) grown as epitaxial layers or as amorphous films. As compared to their crystalline counterparts, the amorphous oxides exhibit significant band-tail states predominantly associated with the smearing-out of the conduction band edge. In Sc2O3 a difference in bandgap width between the crystalline and amorphous phases, caused by variation of the energy of the oxide valence band top, is also observed. No structure-sensitive interface dipoles are found to affect the band alignment at the Si/oxide interfaces.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2007.04.113