Electrical spin injection in light emitting Schottky diodes based on InGaAs /GaAs QW heterostructures

We demonstrate efficient hole spin injection from a ferromagnetic metal (Ni) contact in a forward biased light emitting Schottky diode (LESD) fabricated on a GaAs based heterostructure with a quantum well (QW). The spin polarization of injected holes was detected by measuring circular polarization o...

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Bibliographic Details
Main Authors: Baidus, N V, Vasilevskiy, M I, Gomes, M J M, Kulakovskii, V D, Zaitsev, S V, Dorokhin, M V, Demina, P B, Uskova, E A, Zvonkov, B N
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:We demonstrate efficient hole spin injection from a ferromagnetic metal (Ni) contact in a forward biased light emitting Schottky diode (LESD) fabricated on a GaAs based heterostructure with a quantum well (QW). The spin polarization of injected holes was detected by measuring circular polarization of the electroluminescence (EL) from the near surface InGaAs/GaAs QW. An intermediate gold layer has been used in order to improve the spin injection efficiency. Over 40% degree of circular polarization of the EL has been observed at T= 2 K for the LESD structure with Au-Ni-Au Schottky contact.
ISSN:0094-243X
DOI:10.1063/1.2730357