Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates

By using a frequency-tripled Nd:YVO4 laser source (355 nm) for drilling through-wafer via holes in SiC substrates, we can reduce the surface contamination and achieve better smoothness inside the via holes compared to use of the more common 1064-nm Nd:YVO4 laser. The sheet and contact resistance of...

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Bibliographic Details
Published in:Journal of electronic materials 2006-04, Vol.35 (4), p.675-679
Main Authors: Anderson, T J, Ren, F, Covert, L, Lin, J, Pearton, S J, Dalrymple, T W, Bozada, C, Fitch, R C, Moser, N, Bedford, R G, Schimpf, M
Format: Article
Language:English
Subjects:
Ablative materials
Aluminum gallium nitrides
Contact resistance
Electric contacts
Electrical properties
Gallium nitride epitaxy
Gallium nitrides
High electron mobility transistors
Integrated circuits
Laser drilling
Lasers
Neodymium lasers
Silicon carbide
Silicon substrates
Smoothness
Transistors
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Summary:By using a frequency-tripled Nd:YVO4 laser source (355 nm) for drilling through-wafer via holes in SiC substrates, we can reduce the surface contamination and achieve better smoothness inside the via holes compared to use of the more common 1064-nm Nd:YVO4 laser. The sheet and contact resistance of AlGaN/GaN HEMT layers grown on SiC substrates were similar after formation of vias by 355-nm laser drilling to those of the undrilled reference sample. By sharp contrast, 1064-nm laser drilling produces significant redeposition of ablated material around the via and degrades the electrical properties of the HEMT layers.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-006-0119-8