High-resolution mapping of infrared photoluminescence

We report preliminary results of high-resolution scanning photoluminescence (PL) experiments in the near- and mid-infrared (IR) portions of the spectrum. The samples investigated were Hg^sub 0.7^Cd^sub 0.3^Te epilayers grown on Cd^sub 0.96^Zn^sub 0.04^Te and CdTe/Si substrates used in IR detectors a...

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Bibliographic Details
Published in:Journal of electronic materials 2004-06, Vol.33 (6), p.714-718
Main Authors: FURSTENBERG, Robert, WHITE, Jeffrey O, DINAN, John H, OLSON, Gregory L
Format: Article
Language:English
Subjects:
Cadmium zinc telluride
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronics
Exact sciences and technology
Ii-vi semiconductors
Infrared radiation
Luminescence
Mapping
Mercury cadmium telluride
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Scientific imaging
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Summary:We report preliminary results of high-resolution scanning photoluminescence (PL) experiments in the near- and mid-infrared (IR) portions of the spectrum. The samples investigated were Hg^sub 0.7^Cd^sub 0.3^Te epilayers grown on Cd^sub 0.96^Zn^sub 0.04^Te and CdTe/Si substrates used in IR detectors and focal-plane arrays. To measure mid-IR PL, we modified a commercial, Fourier transform infrared (FTIR) spectrometer and designed a confocal microscope attachment. For near-IR PL mapping, we used a confocal microscope coupled to a grating spectrometer and a charge-couple device (CCD) camera. Diffraction-limited resolution was achieved in the near-IR setup (0.5 µm) and 22-µm resolution for the mid-IR setup. [PUBLICATION ABSTRACT] Key words: Optical characterization, infrared (IR) photoluminescence (PL), PL mapping, high-resolution imaging, HgCdTe, CdZnTe
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-004-0071-4