LER evaluation of molecular resist for EUV lithography

We have designed and synthesized a molecular resist material, which has no distribution of the protecting groups and have evaluated its performance as a molecular resist with EB and EUV exposure tool. The molecular resist attained a resolution of sub-45 nm patterning at an exposure dose of 12 mJ/cm...

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Bibliographic Details
Published in:Microelectronic engineering 2007-05, Vol.84 (5), p.1084-1087
Main Authors: Shiono, Daiju, Hada, Hideo, Yukawa, Hiroto, Oizumi, Hiroaki, Nishiyama, Iwao, Kojima, Kyoko, Fukuda, Hiroshi
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
EUV lithography
Exact sciences and technology
Line edge roughness
Microelectronic fabrication (materials and surfaces technology)
Molecular resist
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We have designed and synthesized a molecular resist material, which has no distribution of the protecting groups and have evaluated its performance as a molecular resist with EB and EUV exposure tool. The molecular resist attained a resolution of sub-45 nm patterning at an exposure dose of 12 mJ/cm 2. It was found that controlling the distribution of the protecting groups in a molecular resist material has a great impact on improving line edge roughness (LER). Low LER values of 3.1 nm (inspection length: L = 620 nm) and 3.6 nm ( L = 2000 nm) were achieved with this molecular resist using Extreme UltraViolet (EUV) lithography tool.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2007.01.146