Interface properties and passivation of p-Si(1 1 1) surfaces by electrochemical organic layer deposition

The grafting of nitrobenzene and bromobenzene onto H-terminated p-Si(1 1 1) surfaces in the presence of HF in the aqueous diazonium salt containing solution was investigated by in situ photoluminescence (PL) and ex situ infrared ellipsometric spectroscopy (IR-SE). The PL measurements revealed that t...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2006-10, Vol.134 (2), p.273-276
Main Authors: Güell, A.G., Roodenko, K., Yang, F., Hinrichs, K., Gensch, M., Sanz, F., Rappich, J.
Format: Article
Language:English
Subjects:
Electrochemical deposition
Infrared Spectroscopic ellipsometry
Organic layer
Passivation
Photoluminescence
Photovoltage
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Summary:The grafting of nitrobenzene and bromobenzene onto H-terminated p-Si(1 1 1) surfaces in the presence of HF in the aqueous diazonium salt containing solution was investigated by in situ photoluminescence (PL) and ex situ infrared ellipsometric spectroscopy (IR-SE). The PL measurements revealed that the grafting process is faster for nitrobenzene and that the Si-phenyl interface is well passivated. Aging experiments in ambient air showed that the organic layers on Si have a better stability against oxidation and therefore, against defect formation than the H-terminated Si(1 1 1) surface.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2006.07.005