ELECTRICAL PROPERTIES OF PLASMA-ASSISTED CVD DEPOSITED THIN SILICON OXYNITRIDE FILMS

The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 deg C in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current-voltage characteristics has shown...

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Bibliographic Details
Published in:Journal of Optoelectronics and Advanced Materials 2005-02, Vol.7 (1), p.553-556
Main Authors: Szekeres, A, Simeonov, S, Gushterov, A, Nikolova, T, Hamelmann, F, Heinzmann, U
Format: Article
Language:English
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Summary:The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 deg C in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current-voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growing films, and therefore, a lower specific resistivity of the SiO,,1?13, films.
ISSN:1454-4164