Electrical and light-emitting properties of (001)-oriented homoepitaxial diamond p–i–n junction

We have realized high-efficiency excitonic emission with deep-UV light at room temperature for a (001)-oriented diamond p–i–n junction diode consisting of the boron-doped p-type, non-doped intrinsic, and phosphorus-doped n-type layers. High-performance p–i–n junction characteristics were confirmed f...

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Bibliographic Details
Published in:Diamond and related materials 2007-04, Vol.16 (4), p.1025-1028
Main Authors: Makino, Toshiharu, Tokuda, Norio, Kato, Hiromitsu, Ogura, Masahiko, Watanabe, Hideyuki, Ri, Sung-Gi, Yamasaki, Satoshi, Okushi, Hideyo
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Diamond film
Electrical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Light emission
Materials science
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Specific materials
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Summary:We have realized high-efficiency excitonic emission with deep-UV light at room temperature for a (001)-oriented diamond p–i–n junction diode consisting of the boron-doped p-type, non-doped intrinsic, and phosphorus-doped n-type layers. High-performance p–i–n junction characteristics were confirmed from current–voltage and capacitance–voltage properties. A strong UV light emission at around 240 nm due to free exciton recombination was observed at a forward current, while the broad visible light emission from deep levels was significantly suppressed compared to that of reported electroluminescence in diamond p–n junctions.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2007.01.024