Deep emissions of MBE-ZnTe on tilted GaAs substrate

• Published in: Journal of crystal growth 2007-04, Vol.301, p.297-300
• Main Authors: Shigaura, G., Ohashi, M., Ichinohe, Y., Kanamori, M., Kimura, Na, Kimura, No, Sawada, T., Suzuki, K., Imai, K.
• Format: Article
• Language: English
• Subjects: B1. ZnTe; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other semiconductors; Photoluminescence; Physics; Specific materials
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.11.107

The photoluminescence (PL) profiles in deep region of ZnTe grown on tilted GaAs (0 0 1) substrates, 2° off toward 〈1 1 0〉, without ZnSe buffer layer have weak self-activated (SA) emissions at about 1.6–2.0 eV. PL shows the characteristic dependence on the excitation intensity and temperature. The excitation intensity dependence of the PL structure at 2.322 eV shows that the emission structure is due to the donor–acceptor pairs (DAP). The temperature dependence of the DAP emission indicates a two-step thermal quenching process. The zero-phonon line of the phonon replicas of oxygen isoelectronic traps is lowered by 5 meV from that of bulk crystal due to the difference in the thermal expansions between ZnTe and the substrate. The emissions at around 1.65 eV are the SA emissions related to Te-interstitial atoms.